Lateral shift measurement using an optical technique
US6974962B2 · kind B2 · utility
70Cited by
14References
17Claims
0Family size
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Key dates
| Filing date | Sep 20, 2001 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Oct 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The method for controlling layers alignment in a multi-layer sample (10), such a semiconductors wafer based on detecting a diffraction efficiency of radiation diffracted from the patterned structures (12, 14) located one above the other in two different layers of the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.