Structure and method for protecting memory cells from UV radiation damage and UV radiation-induced charging during backend processing
US6974989B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2004 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Jun 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/30
Abstract
According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The structure further comprises a first interlayer dielectric layer situated over the at least one memory cell and over the substrate. The structure further comprises an oxide cap layer situated on the first interlayer dielectric layer. According to this exemplary embodiment, the structure further comprises an etch stop layer comprising TCS nitride situated on the oxide cap layer, where the etch stop layer blocks UV radiation. The structure further comprises a second interlayer dielectric layer situated on the etch stop layer. The structure may further comprise a trench situated in the second interlayer dielectric layer and the etch stop layer, where the trench is filled with copper. The structure may further comprise an anti-reflective coating layer situated on the second interlayer dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.