Structure and method to improve channel mobility by gate electrode stress modification

US6977194B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michael P. Belyansky · Hopewell Junction, US
• Dureseti Chidambarrao · Weston, US
• Omer H. Dokumaci · Wappingers Falls, US
• Bruce B. Doris · Brewster, US
• Oleg Gluschenkov · Poughkeepsie, US

Key dates

• Filing date: Oct 30, 2003
• Grant date: Dec 20, 2005
• Expiry date: Oct 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

In producing complementary sets of metal-oxide-semiconductor (CMOS) field effect transistors, including nFET and pFET), carrier mobility is enhanced or otherwise regulated through the reacting the material of the gate electrode with a metal to produce a stressed alloy (preferably CoSi2, NiSi, or PdSi) within a transistor gate. In the case of both the nFET and pFET, the inherent stress of the respective alloy results in an opposite stress on the channel of respective transistor. By maintaining opposite stresses in the nFET and pFET alloys or silicides, both types of transistors on a single chip or substrate can achieve an enhanced carrier mobility, thereby improving the performance of CMOS devices and integrated circuits.