Semiconductor transistor having structural elements of differing materials and method of formation
US6979622B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2004 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Aug 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A transistor is formed using a semiconductor substrate and forming a control electrode overlying the semiconductor substrate. A first current electrode is formed within the semiconductor substrate and adjacent the control electrode. The first current electrode has a first predetermined semiconductor material. A second current electrode is formed within the semiconductor substrate and adjacent the control electrode to form a channel within the semiconductor substrate. The second current electrode has a second predetermined semiconductor material that is different from the first predetermined semiconductor material. The first predetermined semiconductor material is chosen to optimize bandgap energy of the first current electrode, and the second predetermined semiconductor material is chosen to optimize strain of the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.