Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics
US6982465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2001 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | Dec 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
The present invention provides a semiconductor device including n-channel field effect transistors and p-channel field effect transistors all of which have excellent drain current characteristics.In a semiconductor device including an n-channel field effect transistor 10 and a p-channel field effect transistor 30, a stress control film 19 covering a gate electrode 15 of the n-channel field effect transistor 10 undergoes film stress mainly composed of tensile stress. A stress control film 39 covering a gate electrode 15 of the p-channel field effect transistor 30 undergoes film stress mainly caused by compression stress compared to the film 19 of the n-channel field effect transistor 10. Accordingly, drain current is expected to be improved in both the n-channel field effect transistor and the p-channel field effect transistor. Consequently, the characteristics can be generally improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.