Extreme ultraviolet (EUV) lithography masks
US6984475B1 · kind B1 · utility
17Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2003 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Jul 27, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultraviolet (EUV) lithography mask blank. The mask blank can include a substrate having a reflector film disposed over an upper surface of the substrate. The mask blank is provided with structural features to facilitate indirect grounding of the reflector film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.