Integrated transistor circuitry
US6987291B2 · kind B2 · utility
7Cited by
24References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2002 |
| Grant date | Jan 17, 2006 |
| Priority date | — |
| Expiry date | Sep 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26533
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuitry includes a bulk semiconductor substrate. A field effect transistor thereon includes a gate, a channel region in the bulk semiconductor substrate, and source/drain regions within the substrate on opposing sides of the channel region. A field isolation region is formed in the bulk semiconductor substrate and laterally adjoins with one of the source/drain regions. The field isolation region includes a portion which extends beneath at least some of the one source/drain region. Other aspects are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.