Flash memory cell with UV protective layer
US6989563B1 · kind B1 · utility
5Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2004 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Jun 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell in a semiconductor device; depositing and planarizing an interlevel dielectric layer over the charge trapping dielectric flash memory cell and depositing over the planarized interlevel dielectric layer at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.