Chemical mechanical polishing with multi-stage monitoring of metal clearing
US6991516B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Aug 17, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A plurality of portions of a substrate are monitored during polishing at a first polishing station with an in-situ monitoring system. A plurality of thicknesses are determined based on measurements by the in-situ monitoring system, and the plurality of pressures to apply to the plurality of regions of the substrate are calculated in a closed-loop control system. However, if a representative thickness of the layer is less than a threshold thickness, calculation of the plurality of pressures by the closed-loop control system is halted and a plurality of predetermined pressures are applied to the plurality of regions of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.