Method of producing a semiconductor structure having at least one support substrate and an ultrathin layer
US6991995B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 20, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Apr 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor structure having at least one support substrate and an ultrathin layer. The method includes bonding a support substrate to a source substrate, detaching a useful layer along a zone of weakness to obtain an intermediate structure including at least the transferred useful layer and the support substrate, and treating the transferred useful layer to obtain an ultrathin layer on the support substrate. The source substrate includes a front face and a zone of weakness below the front face that defines the useful layer, and the useful layer is sufficiently thick to withstand heat treatments without forming defects therein so that it can be reduced in thickness to form the ultrathin layer. The resulting ultrathin layer is suitable for use in applications in the fields of electronics, optoelectronics or optics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.