Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques
US6992024B2 · kind B2 · utility
5Cited by
23References
21Claims
0Family size
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Key dates
| Filing date | Dec 5, 2003 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Mar 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.