Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
US6992025B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Jan 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Transistors fabricated on SSOI (Strained Silicon On Insulator) substrate, which comprises a strained silicon layer disposed directly on an insulator layer, have enhanced device performance due to the strain-induced band modification of the strained silicon device channel and the limited silicon volume because of the insulator layer. The present invention discloses a SSOI substrate fabrication process comprising various novel approaches. One is the use of a thin relaxed SiGe layer as the strain-induced seed layer to facilitate integration and reduce processing cost. Another is the formation of split implant microcracks deep in the silicon substrate to reduce the number of threading dislocations reaching the strained silicon layer. And lastly is the two step annealing/thinning process for the strained silicon/SiGe multilayer film transfer without blister or flaking formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.