Damascene integration scheme for developing metal-insulator-metal capacitors

US6992344B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• John M. Cotte · New Fairfield, US
• Ebenezer E. Eshun · South Burlington, US
• Kenneth J. Stein · Sandy Hook, US
• Kunal Vaed · Poughkeepsie, US
• Richard P. Volant · New Fairfield, US

Key dates

• Filing date: Dec 13, 2002
• Grant date: Jan 31, 2006
• Expiry date: Dec 13, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/714
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures may be used in analog and mixed signal applications. The capacitor is formed within a trench with pedestals within the trench to provide additional surface area. The top and bottom electrodes are created using damascene integration scheme. The dielectric layer is created as a multilayer dielectric film comprising for instance Al2O3, Al2O3/Ta2O5, Al2O3/Ta2O5/Al2O3 and the like. The dielectric layer may be deposited by methods like atomic layer deposition or chemical vapor deposition. The dielectric layer used in the capacitor may also be produced by anodic oxidation of a metallic precursor to yield a high dielectric constant oxide layer.