Method and system for cleaning a chemical mechanical polishing pad
US6994611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2001 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jun 23, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NH4OH, and the solution includes NH4OH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.