Strained-semiconductor-on-insulator device structures
US6995430B2 · kind B2 · utility
392Cited by
210References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jun 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.