Patent · US Expired

Method for fabricating a storage capacitor

US6998307B2 · kind B2 · utility

2Cited by

14References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Bernhard Sell · Dresden, DE
Annette Sanger · Dresden, DE
Dirk Schumann · Lübbenau/Spreewald - Lubnjow/Błota, DE

Key dates

Filing date	Aug 26, 2003
Grant date	Feb 14, 2006
Priority date	—
Expiry date	Aug 26, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/692
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to a novel method for fabricating a storage capacitor designed as a trench or a stacked capacitor and is used in particular in a DRAM memory cell. The method includes steps of forming a lower, metallic capacitor electrode, a storage dielectric and an upper capacitor electrode. The lower, metallic capacitor electrode is formed in a self-aligned manner on a silicon base material in such a way that uncovered silicon regions are first produced at locations at which the lower capacitor electrode will be formed, and then metal silicide is selectively formed on the uncovered silicon regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.