Thin film transfer join process and multilevel thin film module
US6998327B2 · kind B2 · utility
20Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2002 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Jan 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/016
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A thin film transfer join process in which a multilevel thin film structure is formed on a carrier, the multilevel thin film structure is joined to a final substrate and then the carrier is removed. Once the carrier is removed, the dielectric material and metallic material that were once joined to the carrier are now exposed. The dielectric material is then etched back so that the exposed metallic material protrudes beyond the dielectric material. Also disclosed is a module made by the foregoing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.