Method and apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device
US7001471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1999 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | May 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.