Ferroelectric capacitor devices and FeRAM devices
US7002196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2003 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Nov 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
A ferroelectric capacitor device, such as an FeRAM device is formed of a substrate having one or more contact plugs extending therethrough, and a first interlayer dielectric layer formed on the substrate. A spacer layer is formed on the first interlayer dielectric layer, a first oxygen barrier layer is formed on the spacer layer and a buffer layer is formed on the first oxygen barrier layer. A layer of liner material is formed on the buffer layer between the buffer layer and the contact plugs and a dielectric layer is sandwiched between a first electrode and a second electrode. A second oxygen barrier layer is applied to the device. The spacer layer should prevent any oxidation from reaching the interface between the liner material and the contact plugs as this interface is located beneath the first oxygen barrier layer. As a result, the electrical contact is not damaged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.