Film thickness measuring apparatus and a method for measuring a thickness of a film
US7002361B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | May 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2813
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.