Methods for depositing polycrystalline films with engineered grain structures
US7005160B2 · kind B2 · utility
9Cited by
19References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Aug 17, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/345
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited in a later stage. In an illustrated embodiment, the initial stage includes an anneal step. In another embodiment, the later stage involves depositing the second layer under different deposition conditions than for the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.