Silicon on insulator substrate having improved thermal conductivity and method of its formation
US7015078B1 · kind B1 · utility
15Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2003 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Sep 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon on insulator (SOI) substrate includes a layer of silicon carbide beneath an insulating layer on which semiconductor devices are formed. The silicon carbide layer has a high thermal conductivity and provides beneficial dissipation of thermal energy generated by the devices. The SOI substrate may be formed by a bonding method. SOI MOSFET devices using the SOI substrate are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.