Bitline governed approach for program control of non-volatile memory
US7020026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2004 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Jul 7, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a system for programming non-volatile storage, technology is disclosed for programming with greater precision and reasonable program times. In one embodiment, a first voltage is applied to a bit line for a first non-volatile storage element in order to inhibit that first non-volatile storage element. A first program voltage is applied to the first non-volatile storage element. For example, a program pulse is applied to a control gate for the first non-volatile storage element. During the program pulse, the bit line is changed from said first voltage to a second voltage, where the second voltage allows the first non-volatile storage element to be programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.