Daniel C. Guterman
159Patents
59h-index
43Co-inventors
90Inventor score
Filing activity: Jan 5, 1979 → Feb 18, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6222762A | Multi-state memory | Physics | 1,004 | Expired |
| US5313421A | EEPROM with split gate source side injection | Physics | 604 | Expired |
| US5343063A | Dense vertical programmable read only memory cell structure and processes for making them | Electricity | 544 | Expired |
| US5657332A | Soft errors handling in EEPROM devices | Physics | 540 | Expired |
| US5532962A | Soft errors handling in EEPROM devices | Physics | 435 | Expired |
| US5270979A | Method for optimum erasing of EEPROM | Physics | 399 | Expired |
| US5887145A | Removable mother/daughter peripheral card | Electricity | 312 | Expired |
| US5712180A | EEPROM with split gate source side injection | Physics | 278 | Expired |
| US6151248A | Dual floating gate EEPROM cell array with steering gates shared by adjacent cells | Physics | 256 | Expired |
| US6751766B2 | Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data | Physics | 251 | Expired |
| US5396468A | Streamlined write operation for EEPROM system | Physics | 229 | Expired |
| US5798968A | Plane decode/virtual sector architecture | Electricity | 225 | Expired |
| US6317364A | Multi-state memory | Physics | 204 | Expired |
| US7068539B2 | Charge packet metering for coarse/fine programming of non-volatile memory | Physics | 191 | Expired |
| US7237074B2 | Tracking cells for a memory system | Physics | 173 | Expired |
| US5504760A | Mixed data encoding EEPROM system | Physics | 170 | Expired |
| US6538922B1 | Writable tracking cells | Physics | 161 | Expired |
| US6044019A | Non-volatile memory with improved sensing and method therefor | Physics | 158 | Expired |
| US7177199B2 | Behavior based programming of non-volatile memory | Physics | 150 | Expired |
| US6678192B2 | Error management for writable tracking storage units | Physics | 146 | Expired |
| US5883409A | EEPROM with split gate source side injection | Physics | 143 | Expired |
| US6925007B2 | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements | Emerging Cross-Sectional Technologies | 139 | Expired |
| US6856546B2 | Multi-state memory | Physics | 137 | Expired |
| US6317363A | Multi-state memory | Physics | 130 | Expired |
| US6664587B2 | EEPROM cell array structure with specific floating gate shape | Physics | 127 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.