Nitrogen-enriched low-k barrier layer for a copper metallization layer

US7022602B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Hartmut Ruelke · Dresden, DE
• Joerg Hohage · Dresden, DE
• Thomas Werner · Radebeul, DE
• Michael Kiene · Radebeul, DE

Key dates

• Filing date: Nov 19, 2003
• Grant date: Apr 4, 2006
• Expiry date: Dec 4, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier layer is provided with a surface modified by plasma treatment. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in the low-k dielectric layer is significantly suppressed, so that in a subsequent photolithography step interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.