Very low effective dielectric constant interconnect Structures and methods for fabricating the same

US7023093B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Donald F. Canaperi · Bridgewater, US
• Timothy J. Dalton · Ridgefield, US
• Stephen M. Gates · Ossining, US
• Mahadevaiyer Krishnan · Hopewell Junction, US
• Satya V. Nitta · Armonk, US
• Sampath Purushothaman · Yorktown Heights, US
• Sean Smith · Hopewell Junction, US

Key dates

• Filing date: Oct 24, 2002
• Grant date: Apr 4, 2006
• Expiry date: Jan 26, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.