Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy
US7029995B2 · kind B2 · utility
22Cited by
8References
36Claims
0Family size
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Key dates
| Filing date | Jun 9, 2004 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Oct 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming epitaxial films involve forming a buffer layer on a single crystal substrate, depositing an amorphous layer on the buffer layer, then forming an epitaxial film from the amorphous layer by solid phase epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.