Patent · US Expired

Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric

US7030044B2 · kind B2 · utility

2Cited by

9References

11Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Hartmut Ruelke · Dresden, DE
Joerg Hohage · Dresden, DE
Thomas Werner · Radebeul, DE
Frank Mauersberger · Radebeul, DE

Key dates

Filing date	Jun 16, 2003
Grant date	Apr 18, 2006
Priority date	—
Expiry date	Aug 1, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/952
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a multi-layer stack over a low-k dielectric layer is disclosed, wherein the multi-layer stack provides an improved anti-reflective effect and an enhanced protection of the underlying low-k dielectric material during the chemical mechanical polishing process. The multi-layer stack includes silicon dioxide based sub-layers, which may be formed in a highly efficient, non-expensive plasma enhanced deposition method, wherein the optical characteristics may be adjusted by varying a ratio of silane and nitrogen oxide during the deposition.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.