Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nm

US7033740B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jörg Rottstegge · Erlangen, DE
• Christian Eschbaumer · Arnstorf, DE
• Christoph Hohle · Bubenreuth, DE
• Waltraud Herbst · Uttenreuth, DE

Key dates

• Filing date: Jul 1, 2002
• Grant date: Apr 25, 2006
• Expiry date: Mar 16, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/0758
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous alkaline developers. The film-forming polymer has polymer building blocks derived from monomers which are at least monofluorinated and contain an anchor group for the attachment of an amplifying agent. As a result of the fluorination of the polymer building blocks, the transparency of the resist at an exposing wavelength of 157 nm is substantially increased, so that resist structures of increased layer thickness can be represented.