Patent · US Expired

Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors

US7034400B2 · kind B2 · utility

0Cited by
31References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 10, 2003
Grant dateApr 25, 2006
Priority date
Expiry dateSep 10, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/1036
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A metallization insulating structure, having

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.