Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors
US7034400B2 · kind B2 · utility
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31References
12Claims
0Family size
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Key dates
| Filing date | Sep 10, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Sep 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallization insulating structure, having
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.