Patent · US Expired

Imaging integrated circuits with focused ion beam

US7036109B1 · kind B1 · utility

1Cited by
11References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 17, 2002
Grant dateApr 25, 2006
Priority date
Expiry dateNov 25, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/3174
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Methods and apparatus for integrated circuit diagnosis, characterization or modification using a focused ion beam. A method for editing an integrated circuit includes acquiring an image of structures of an integrated circuit by applying a focused ion beam to an outer surface of the integrated circuit to visualize structures beneath the outer surface of the integrated circuit. The method includes using the image to find a location of a circuit element in the integrated circuit and then performing one or more editing operations on the circuit element by applying a focused ion beam to the location found.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.