Magneto-resistance effect element and magnetic memory
US7038939B2 · kind B2 · utility
16Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Mar 11, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.