Patent · US Expired

Method for the production of a self-adjusted structure on a semiconductor wafer

US7041568B2 · kind B2 · utility

197Cited by

9References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Matthias Goldbach · Dresden, DE
Thomas Hecht · Dresden, DE
Jorn Lutzen · Dresden, DE
Bernhard Sell · Dresden, DE

Key dates

Filing date	Jul 18, 2002
Grant date	May 9, 2006
Priority date	—
Expiry date	Jul 18, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76897
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A structure on a layer surface of the semiconductor wafer has at least one first area region (8, 9), which is reflective for electromagnetic radiation, and at least one second, essentially nonreflecting area region (10, 11, 12). A light-transmissive insulation layer (13) and a light-sensitive layer are produced on said layer surface. The electromagnetic radiation is directed onto the light-sensitive layer with an angle Θ of incidence and the structure of the layer surface is imaged with a lateral offset into the light-sensitive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.