Fluorinated hard mask for micropatterning of polymers

US7042091B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• Mikhail Baklanov · Veltem-Beisem, BE
• Serge Vanhaelemeersch · Leuven, BE
• Karen Maex · Herent, BE
• Joost Waeterloos · Heverlee, BE
• Gilbert Declerck · Herent, BE

Key dates

• Filing date: Apr 27, 2001
• Grant date: May 9, 2006
• Expiry date: Apr 27, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76802
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention discloses the formation of a hard mask layer in an organic polymer layer by modifying at least locally the chemical composition of a part of said exposed organic low-k polymer. This modification starts from an exposed surface of the polymer and extends into the polymer thereby increasing the chemical resistance of the modified part of the polymer. As a result, this modified part can be used as a hard mask or an etch stop layer for plasma etching.