Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing
US7042705B2 · kind B2 · utility
3Cited by
8References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 30, 2003 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Jun 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a sidewall oxygen diffusion barrier and a method for fabricating the sidewall oxygen diffusion barrier that reduces the diffusion of oxygen into contact plugs during a CW hole reactive ion etch of a ferroelectric capacitor of an FeRAM device. In one embodiment the sidewall barrier is formed from a substrate fence. In another embodiment, the sidewall barrier is formed by etching back an oxygen barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.