Very low effective dielectric constant interconnect structures and methods for fabricating the same
US7045453B2 · kind B2 · utility
199Cited by
6References
9Claims
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Key dates
| Filing date | Apr 12, 2005 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Apr 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less-robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.