Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
US7046339B2 · kind B2 · utility
27Cited by
2References
12Claims
0Family size
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Key dates
| Filing date | Mar 5, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Apr 24, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70158
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Descriptions and depictions of specific DOE's are provided. Additionally, a pupilgram having a particular pattern, and methods for forming the pupilgram, are discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.