Integration of ALD tantalum nitride for copper metallization
US7049226B2 · kind B2 · utility
474Cited by
281References
55Claims
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Key dates
| Filing date | Jun 10, 2004 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Jun 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76871
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.