Differential non-volatile content addressable memory cell and array using phase changing resistor storage elements
US7050316B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2004 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Mar 9, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A differential sensing content addressable memory cell without any word lines connected to the cells in the same row comprises a first bit line for supplying a first bit. A first storage element has a first phase change resistor for storing a first stored bit, which is connected in series with a first diode. The first storage element is connected to the first bit line. A second bit line supplies a second bit, with the second bit being an inverse of the first bit. A second storage element has a second phase change resistor for storing a second stored bit, which is connected in series with a second diode. The second storage element is connected to the second bit line. A match line is connected to the first and second storage elements for indicating whether a match occurred between the first bit and the first stored bit, and between the second bit and the second stored bit
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.