Patent · US Expired

Silicon-containing resist for photolithography

US7052820B2 · kind B2 · utility

2Cited by

6References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jörg Rottstegge · Erlangen, DE
Eberhard Kuhn · Hemhofen, DE
Waltraud Herbst · Uttenreuth, DE
Christian Eschbaumer · Arnstorf, DE
Christoph Hohle · Bubenreuth, DE
Michael Sebald · Waischenfeld, DE

Key dates

Filing date	Jul 30, 2002
Grant date	May 30, 2006
Priority date	—
Expiry date	May 17, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S430/108
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.