Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication
US7052932B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Mar 21, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dual damascene structure with improved performance is described. A first etch stop layer comprised of oxygen doped SiC is deposited on a SiC barrier layer to form a composite barrier/etch stop layer on a substrate. The remainder of the damascene stack is formed by sequentially depositing a first dielectric layer, a second oxygen doped SiC etch stop layer, and a second dielectric layer. A via and overlying trench are formed and filled with a diffusion barrier layer and a metal layer. The oxygen doped SiC layers have a lower dielectric constant than SiC or SIGN and a higher breakdown field than SiC. The etch selectivity of a C4F8/Ar etch for a SiCOH layer relative to the oxygen doped SiC layer is at least 6:1 because of a lower oxygen content in the oxygen doped SiC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.