Patent · US Expired

Precharging the write path of an MRAM device for fast write operation

US7057924B2 · kind B2 · utility

2Cited by

2References

16Claims

0Family size

Assignees

Infineon Technologies AG · DE
International Business Machines Corporation · US

Inventors

Stefan Lammers · Hersbruck, DE
Hans-Heinrich Viehmann · Munich, DE
Thomas M. Maffitt · Burlington, US
John E. Barwin · South Burlington, US

Key dates

Filing date	Jan 15, 2004
Grant date	Jun 6, 2006
Priority date	—
Expiry date	Oct 16, 2024

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/16
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The write path of an MRAM device is precharged before starting a write operation of a magnetic memory cell, increasing the speed of the write operation and decreasing the write cycle time. The reference wires are precharged, which provides better control over the wordline and bitline write pulses and results in shorter rise times. The precharge time can be hidden in the address decoding time or redundancy evaluation time. A circuit design for a global reference current generator is also described herein. A fast on circuit is also disclosed that increases the speed of precharging the reference wires.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.