Method for cleaning the surface of a substrate

US7063091B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Frank Koschinsky · Radebeul, DE
• Volker Kahlert · Dresden, DE
• Peter Huebler · Coswig, DE

Key dates

• Filing date: Mar 4, 2005
• Grant date: Jun 20, 2006
• Expiry date: Mar 4, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76814
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A cleaning process for cleaning the surface of a substrate is disclosed, wherein the surface comprises portions of a dielectric material and portions of a conductive material. According to the method disclosed, the temperature at the surface of the substrate is kept below a predefined value during the actual cleaning step in a reactive and/or inert plasma ambient, such as an argon gas ambient, wherein the predefined value corresponds to the surface temperature at which agglomeration of the conductive material occurs.