Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners
US7063751B2 · kind B2 · utility
2Cited by
10References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2002 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Sep 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that the width of the mask opening width is greater than the width of the trench. After that, the inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished to complete the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.