High Q factor integrated circuit inductor

US7068138B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Daniel C. Edelstein · White Plains, US
• Panayotis Andricacos · Ossining, US
• John M. Cotte · New Fairfield, US
• Hariklia Deligianni · Alpine, US
• John Harold Magerlein · Yorktown Heights, US
• Kevin S. Petrarca · Newburgh, US
• Kenneth J. Stein · Sandy Hook, US
• Richard P. Volant · New Fairfield, US

Key dates

• Filing date: Jan 29, 2004
• Grant date: Jun 27, 2006
• Expiry date: Mar 24, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/30107
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An inductor and a method of forming and the inductor, the method including: (a) providing a semiconductor substrate; (b) forming a dielectric layer on a top surface of the substrate; (c) forming a lower trench in the dielectric layer; (d) forming a resist layer on a top surface of the dielectric layer; (e) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (f) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.