Integrated memory having a voltage generator circuit for generating a voltage supply for a read/write amplifier
US7068546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Apr 2, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated memory contains a memory cell array, which has word lines and bit lines, and a read/write amplifier, which is connected to the bit lines for the assessing and amplifying data signals. A voltage generator circuit generates a voltage supply for application to the read/write amplifier. A potential difference is applied to the read/write amplifier using different supply potentials. The voltage generator circuit increases the potential difference applied to the read/write amplifier for a limited period of time during an assessment and amplification operation of the read/write amplifier. Charge-dependent control is implemented in the voltage generator circuit. An assessment and amplification operation can be carried out at a comparatively high switching speed and a low power consumption is possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.