Chemical treatment to retard diffusion in a semiconductor overlayer
US7071103B2 · kind B2 · utility
120Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Aug 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.