One stack with steam oxide for charge retention
US7071538B1 · kind B1 · utility
10Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2004 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Dec 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate that further includes source, drain and channel regions. The device may further include a bottom oxide layer formed upon the substrate, a charge storage layer formed upon the bottom oxide layer, and a steam oxide layer thermally grown upon the charge storage layer. The device may also include an alumina oxide layer formed upon the steam oxide layer and a gate electrode formed upon the alumina oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.