Chemical mechanical polishing control system and method
US7074109B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Aug 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A system, method, and computer program product for chemical mechanical polishing a substrate in which initially a plurality of predetermined pressures are applied to a plurality of regions of the substrate. A plurality of portions of the substrate are monitored during polishing with an in-situ monitoring system. If the difference in thickness between two portions of the substrate exceeds a predetermined threshold, a plurality of adjusted pressures are calculated in a closed-loop control system, and the plurality of adjusted pressures are applied to the plurality of regions of the substrate. The predetermined threshold includes an initial threshold for the start of the polishing process and a second threshold for a period of polishing after the start of the polishing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.