Methods of forming strained-semiconductor-on-insulator finFET device structures
US7074623B2 · kind B2 · utility
173Cited by
223References
6Claims
0Family size
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Key dates
| Filing date | Jun 6, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Jul 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76275
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.